DocumentCode :
3631505
Title :
Non-quasi-static bipolar transistor models for circuit simulators
Author :
N.D. Jankovic;T.R. Ilic;J.P. Karamarkovic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Volume :
2
fYear :
1995
Firstpage :
681
Abstract :
The novel one-dimensional non-quasi static bipolar junction transistor model for circuit simulator, based on the transmission line equivalent circuit representation of quasi-neutral regions, is described. It is compared with the most recent non-quasi static Wu and Lindholm (1989) and Seitchik et al. (1987) bipolar transistor models. Good agreement of the simulated large and small signal results is obtained between various models, of which the novel transmission line model appears to be the most accurate one.
Keywords :
"Bipolar transistors","Circuit simulation","Distributed parameter circuits","Voltage","Bipolar transistor circuits","Equivalent circuits","Silicon","Equations","Charge carrier processes","Steady-state"
Publisher :
ieee
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN :
0-7803-2786-1
Type :
conf
DOI :
10.1109/ICMEL.1995.500948
Filename :
500948
Link To Document :
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