Title :
A simple 2D analytical model of HEMT
Author :
R. Sasic;R. Ramovic;D. Tjapkin
Author_Institution :
Fac. of Technol. & Metall., Belgrade Univ., Serbia
Abstract :
A simple 2D analytical approximate model for the current-voltage characteristic of a HEMT (MODFET) has been proposed. The inversion layer carrier density has been determined by means of "classical" (nonquantum) physics (the advantage of this approach has been explained with convincing arguments), while their transport has been treated in the frame of the drift-diffusion model. The influence of the quantum effect has also been discussed and the realistic shape of the transport characteristic /spl nu/(E) accounted for.
Keywords :
"Analytical models","HEMTs","Gallium arsenide","MODFETs","Poisson equations","Doping","Electrons","Charge carrier density","Shape","Energy states"
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500954
