• DocumentCode
    3631587
  • Title

    C/sub /spl infin//-continuous small-geometry MOSFET modeling for analog applications

  • Author

    B. Iniguez;E.G. Moreno

  • Author_Institution
    Dept. of Phys., Univ. of the Balearic Islands, Palma de Mallorca, Spain
  • Volume
    1
  • fYear
    1995
  • Firstpage
    41
  • Abstract
    An explicit physically-based C/sub /spl infin//-continuous MOSFET modeling for all regions of operation is presented. The model accurately includes the small-geometry effects. As a consequence good agreement with measurements is observed and currents and their derivatives show smooth transitions between regions. Therefore the model is very suitable for analog applications, especially in the moderate inversion region.
  • Keywords
    "MOSFET circuits","Equations","Voltage","Channel bank filters","Physics","Current measurement","Smoothing methods","Capacitance","Degradation","FETs"
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on
  • Print_ISBN
    0-7803-2972-4
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1995.504373
  • Filename
    504373
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3631587