DocumentCode
3631793
Title
A comparison of Si and Si/sub 1-x/Ge/sub x/ based BJTs using numerical simulation
Author
B. Pejcinovic;T.-W. Tang;D.H. Navon
Author_Institution
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
fYear
1988
fDate
6/10/1905 12:00:00 AM
Firstpage
46
Lastpage
48
Abstract
Static and small signal performances of Si and Si/sub 1-x/Ge/sub x/ based bipolar junction transistors (BJTs) are compared using numerical simulation. Si/sub 1-x/Ge/sub x/ BJT shows reduced turn-on voltage ( Delta V/sub BE/=0.12 V), much higher current gain h/sub fe/, up to two time higher unity current gain frequency f/sub T/, and somewhat higher maximum frequency of oscillation f/sub max/. By using Si/sub 1-x/Ge/sub x/ it is possible to reduce power dissipation in the circuit environment. Small signal current gain, as obtained by using the quasi-static approximation, is shown for the common emitter configuration.
Keywords
"Numerical simulation","Capacitive sensors","Voltage","Frequency","Photonic band gap","Geometry","Scattering","Doping profiles","Heterojunction bipolar transistors","Temperature"
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Type
conf
DOI
10.1109/BIPOL.1988.51042
Filename
51042
Link To Document