A method of the BJT transient thermal impedance measurement with double junction calibration

In the paper a new method of the transient thermal impedance measurement of the bipolar transistor (BJT) is presented. This method is based on the conception of the double calibration of the thermosensitive emitter junction at a small collector current and under the condition of the heating power dissipated in the device, respectively. The method presented belongs to the methods making use of the heating curve, but it is simpler (faster) in realisation than the standard methods.