Title :
Defect thermal ionization energies in Cu-III-VI2 compound semiconductors
Author_Institution :
Budapest Tech, Kand? K?lm?n Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Hungary
fDate :
5/1/2009 12:00:00 AM
Abstract :
Results of an analysis of the dependence of the thermal ionization energies of various defect centres in ternary Cu-III-VI2 chalcopyrite compound semiconductors are presented. It is established that this dependence can be satisfactorily described by using a simple electrostatic interaction model between the charged centres.
Keywords :
"Ionization","Electrostatics","Erbium","Dielectric constant","Thermal engineering","Materials science and technology","Semiconductor materials","Neodymium","Kalman filters","Microelectronics"
Conference_Titel :
Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
Print_ISBN :
978-1-4244-4260-7
Electronic_ISBN :
2161-2064
DOI :
10.1109/ISSE.2009.5206953
