• DocumentCode
    3632832
  • Title

    Defect thermal ionization energies in Cu-III-VI2 compound semiconductors

  • Author

    Balint Podor

  • Author_Institution
    Budapest Tech, Kand? K?lm?n Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Hungary
  • fYear
    2009
  • fDate
    5/1/2009 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Results of an analysis of the dependence of the thermal ionization energies of various defect centres in ternary Cu-III-VI2 chalcopyrite compound semiconductors are presented. It is established that this dependence can be satisfactorily described by using a simple electrostatic interaction model between the charged centres.
  • Keywords
    "Ionization","Electrostatics","Erbium","Dielectric constant","Thermal engineering","Materials science and technology","Semiconductor materials","Neodymium","Kalman filters","Microelectronics"
  • Publisher
    ieee
  • Conference_Titel
    Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
  • ISSN
    2161-2528
  • Print_ISBN
    978-1-4244-4260-7
  • Electronic_ISBN
    2161-2064
  • Type

    conf

  • DOI
    10.1109/ISSE.2009.5206953
  • Filename
    5206953
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3632832