Title :
Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devices
Author :
Ryszard Kisiel;Marek Guziewicz;Anna Piotrowska;Eliana Kaminska;Krystyna Golaszewska;Norbert Kwietniewski;Wojciech Paszkowicz;Karolina Pagowska;Renata Ratajczak;Anna Stonert
Author_Institution :
Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Poland
fDate :
5/1/2009 12:00:00 AM
Abstract :
The stability of SiC/Ti/Au ohmic contacts as well as the strength of Au wire connection onto n-SiC chips were investigated. The ohmic contact to n-SiC was formed by rapid thermal annealing of Ti film and Au metallization has been applied to form electrical connections using Au wire bonds. Long-term tests of the connections were performed in air at 400degC. Evaluation of electrical parameters as well as stable morphology and structure of the metallization show good stability of the Au based electrical connections.
Keywords :
"Gold","Stability","Bonding","Ohmic contacts","Metallization","Wire","Silicon carbide","Rapid thermal annealing","Testing","Performance evaluation"
Conference_Titel :
Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
Print_ISBN :
978-1-4244-4260-7
Electronic_ISBN :
2161-2064
DOI :
10.1109/ISSE.2009.5207044
