DocumentCode
3633071
Title
An approximation method for modeling a CMOS bit-level product cell
Author
Yesenia E. Gonzalez-Navarro;Felipe Gomez-Castaneda;Jose A. Moreno-Cadenas
Author_Institution
VLSI Lab., Solid-State Electronics Section, Department of Electrical Engineering, CINVESTAV-IPN, Mexico City, Mexico
fYear
2009
Firstpage
897
Lastpage
900
Abstract
An approximation method for a CMOS bit-level product cell used for vector-matrix multiplications is presented. The quantitative mathematical model of the cell is obtained by using CID/CCD principles to understand the device function and employing MOS structure equations to describe the cell operation. Due to the resultant equation cannot be solved explicitly, a multilayer artificial neural network is proposed to do functions approximations. The resultant algorithm is used to create an electrical device model for PSPICE simulations.
Keywords
"Approximation methods","Semiconductor device modeling","Charge coupled devices","Electrodes","Equations","Artificial neural networks","Voltage control","Clocks","SPICE","Logic"
Publisher
ieee
Conference_Titel
Circuits and Systems, 2009. MWSCAS ´09. 52nd IEEE International Midwest Symposium on
ISSN
1548-3746
Print_ISBN
978-1-4244-4479-3
Electronic_ISBN
1558-3899
Type
conf
DOI
10.1109/MWSCAS.2009.5235911
Filename
5235911
Link To Document