Title :
Properties of silicon carbide schottky diodes under self-heating influence
Author :
J. Zarebski;J. Dabrowski
Author_Institution :
Gdynia Maritime University, Department of Marine Electronics Morska Str. 81-87, 81-225 Gdynia, Poland
Abstract :
The paper deals with modelling non-isothermal characteristics of SiC power Schottky diodes. In the paper the d.c. electrothermal model of the investigated devices included the self-heating phenomenon was presented and experimentally verified. The model was formulated for SPICE. The evaluation of the accuracy of the elaborated model has been performed by comparison of calculated and measured d.c. characteristics of a commercial available SiC power Schottky diode.
Keywords :
"Silicon carbide","Schottky diodes","SPICE","Semiconductor diodes","Isothermal processes","Electrothermal effects","Temperature dependence","Semiconductor devices","Voltage control","Performance evaluation"
Conference_Titel :
Circuit Theory and Design, 2009. ECCTD 2009. European Conference on
DOI :
10.1109/ECCTD.2009.5274939
