• DocumentCode
    3633255
  • Title

    Properties of silicon carbide schottky diodes under self-heating influence

  • Author

    J. Zarebski;J. Dabrowski

  • Author_Institution
    Gdynia Maritime University, Department of Marine Electronics Morska Str. 81-87, 81-225 Gdynia, Poland
  • fYear
    2009
  • Firstpage
    253
  • Lastpage
    256
  • Abstract
    The paper deals with modelling non-isothermal characteristics of SiC power Schottky diodes. In the paper the d.c. electrothermal model of the investigated devices included the self-heating phenomenon was presented and experimentally verified. The model was formulated for SPICE. The evaluation of the accuracy of the elaborated model has been performed by comparison of calculated and measured d.c. characteristics of a commercial available SiC power Schottky diode.
  • Keywords
    "Silicon carbide","Schottky diodes","SPICE","Semiconductor diodes","Isothermal processes","Electrothermal effects","Temperature dependence","Semiconductor devices","Voltage control","Performance evaluation"
  • Publisher
    ieee
  • Conference_Titel
    Circuit Theory and Design, 2009. ECCTD 2009. European Conference on
  • Type

    conf

  • DOI
    10.1109/ECCTD.2009.5274939
  • Filename
    5274939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3633255