DocumentCode :
3633271
Title :
Behavior of various geometry MagFET structures
Author :
Martin Daricek;Martin Donoval;Alexander Satka
Author_Institution :
Department of Microelectronics Faculty of Electrical Engineering and Information Technology, STU Bratislava, Slovakia
fYear :
2009
Firstpage :
17
Lastpage :
20
Abstract :
This paper deal with characterization of various MagFET structures in alternating magnetic field in frequency range from 20 Hz to 5 kHz. 2D numerical simulation of MagFET structures has been used to investigate current density distribution and influence of MagFET geometry to the external magnetic field sensitivity. Rectangle- and sectorial-shaped structures of various dimensions were designed and fabricated in standard 1μm two metal CMOS technology. Fabricated MagFET devices were characterized for applications as a sensor of external magnetic fields. The measurement results show dependence of MagFETs external magnetic field sensitivity on structure geometry, dimensions and biasing conditions.
Keywords :
"Magnetic fields","Magnetic sensors","Magnetic field measurement","CMOS technology","Intelligent sensors","Shape","Information geometry","Current density","Sensor phenomena and characterization","Sensor systems and applications"
Publisher :
ieee
Conference_Titel :
Circuit Theory and Design, 2009. ECCTD 2009. European Conference on
Type :
conf
DOI :
10.1109/ECCTD.2009.5275146
Filename :
5275146
Link To Document :
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