• DocumentCode
    3633288
  • Title

    Hole mobility in InP and GaSb

  • Author

    B. Podor

  • Author_Institution
    Institute of Microelectronics and Technology, Kand? K?lm?n Faculty of Electrical Engineering, Budapest Tech, Budapest, Hungary
  • fYear
    2008
  • fDate
    5/1/2008 12:00:00 AM
  • Firstpage
    201
  • Lastpage
    204
  • Abstract
    Results are reported on an experimental and theoretical study of the temperature dependence of hole mobility in nominally undoped p-type GaSb and in Zn-doped p-type InP bulk crystals in the temperature range from 77 to 300 K. In both materials space charge scattering and/or dipole scattering described with a mobility contribution with a ~T-1/2like temperature dependence dominated the hole mobility in the investigated temperature range.
  • Keywords
    "Indium phosphide","Temperature dependence","III-V semiconductor materials","Temperature distribution","Crystals","Crystalline materials","Semiconductor materials","Optical scattering","Optical materials","Nanotechnology"
  • Publisher
    ieee
  • Conference_Titel
    Electronics Technology, 2008. ISSE ´08. 31st International Spring Seminar on
  • ISSN
    2161-2528
  • Print_ISBN
    978-1-4244-3973-7;978-1-4244-3972-0
  • Electronic_ISBN
    2161-2064
  • Type

    conf

  • DOI
    10.1109/ISSE.2008.5276545
  • Filename
    5276545
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3633288