Title :
Hole mobility in InP and GaSb
Author_Institution :
Institute of Microelectronics and Technology, Kand? K?lm?n Faculty of Electrical Engineering, Budapest Tech, Budapest, Hungary
fDate :
5/1/2008 12:00:00 AM
Abstract :
Results are reported on an experimental and theoretical study of the temperature dependence of hole mobility in nominally undoped p-type GaSb and in Zn-doped p-type InP bulk crystals in the temperature range from 77 to 300 K. In both materials space charge scattering and/or dipole scattering described with a mobility contribution with a ~T-1/2like temperature dependence dominated the hole mobility in the investigated temperature range.
Keywords :
"Indium phosphide","Temperature dependence","III-V semiconductor materials","Temperature distribution","Crystals","Crystalline materials","Semiconductor materials","Optical scattering","Optical materials","Nanotechnology"
Conference_Titel :
Electronics Technology, 2008. ISSE ´08. 31st International Spring Seminar on
Print_ISBN :
978-1-4244-3973-7;978-1-4244-3972-0
Electronic_ISBN :
2161-2064
DOI :
10.1109/ISSE.2008.5276545
