Title :
Detectors of microwave and terahertz radiation on the basis of semiconductor nanostructures
Author :
Steponas Asmontas;Viktorija Kazlauskaite;Algirdas Suziedelis;Jonas Gradauskas;Edmundas Sirmulis;Vadim Derkach
Author_Institution :
Semiconductor Physics Institute A. Go?tauto 11, LT-01108 Vilnius, Lithuania
Abstract :
Experimental results of electromagnetic radiation detection in wide frequency range using planar diode having asymmetrically necked semiconductor structure are presented. Electromotive force is induced across the diode due to nonuniform free carrier heating under the action of radiation. MBE grown selectively doped AlGaAs/GaAs as well as AlGaAs/InGaAs/GaAs structures are used for fabrication of the planar diodes. Voltage-power characteristics of the diodes are measured in frequency range from 10 GHz up to 3 THz.
Keywords :
"Radiation detectors","Semiconductor radiation detectors","Semiconductor nanostructures","Semiconductor diodes","Frequency","Gallium arsenide","Electromagnetic heating","Electromagnetic radiation","Indium gallium arsenide","Fabrication"
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Print_ISBN :
978-1-4244-4748-0
