Title :
Design flow for a SiGe BiCMOS based power amplifier
Author :
Mladen Bozanic;Saurabh Sinha;Monuko du Plessis;Alexandru Muller
Author_Institution :
Department of Electrical, Electronic and Computer Engineering, University of Pretoria, South Africa
Abstract :
This paper presents a streamlined design flow for an integrated power amplifier. For a given set of amplifier specifications and BiCMOS process parameters, a software routine computes passive component values for a Class-E or Class-F based power amplifier. The routine includes a matching network for standard impedance loads. Spiral inductor search algorithm is used to generate inductors with Q-factors optimised at a desired frequency. Operation of the software routine is demonstrated by simulations in Austriamicrosystems 0.35 µm single-supply process for the 10 dBm, 2.4 GHz power amplifier design.
Keywords :
"Silicon germanium","Germanium silicon alloys","BiCMOS integrated circuits","Power amplifiers","Inductors","Impedance","Spirals","Q factor","Frequency","Computational modeling"
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Print_ISBN :
978-1-4244-4413-7
Electronic_ISBN :
2377-0678
DOI :
10.1109/SMICND.2009.5336537
