DocumentCode
3633986
Title
Charge injection induced sample and hold error analysis
Author
Andrei Danchiv;Mircea Bodea;Ana-Maria Luca;Ioan-Alexandru Tranca
Author_Institution
Infineon Technologies Romania, Blvd. Dimitrie Pompeiu nr. 6, Bucharest, Romania
Volume
2
fYear
2009
Firstpage
491
Lastpage
494
Abstract
This paper analysis the charge injection induced error in CMOS switched capacitor circuits. For this purpose, the basic S/H topology is used and an on-off transition model is considered, for both n and p channel switches. The transient error voltage behavior is presented. The final error value dependence on circuit parameters is analyzed and compared with simulation results.
Keywords
"Error analysis","Switches","Voltage","Capacitance","MOS capacitors","Character generation","Equations","Switched capacitor circuits","Circuit topology","Circuit analysis"
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2009. CAS 2009. International
ISSN
1545-827X
Print_ISBN
978-1-4244-4413-7
Electronic_ISBN
2377-0678
Type
conf
DOI
10.1109/SMICND.2009.5336668
Filename
5336668
Link To Document