DocumentCode :
3633990
Title :
CMOS RF active inductor with improved tuning capability
Author :
Cristian Andriesei;Liviu Goras;Farid Temcamani;Bruno Delacressoniere
Author_Institution :
?Gheorghe Asachi? Technical University, Ia?i, Romania
Volume :
2
fYear :
2009
Firstpage :
397
Lastpage :
400
Abstract :
This paper presents an improved low power CMOS active inductor topology suitable for RF filtering. The circuit is derived from a previous designed transistor-only active inductor by adding a floating voltage source to one transistor gate fact that positively changes the overall dc biasing. If a current source with high output resistance is used for active inductor, this method can lead to lower interdependence between the self resonant frequency and quality factor. The simulations were carried out in 0.18 mum CMOS technology.
Keywords :
"Radio frequency","Active inductors","Resonant frequency","Active filters","Q factor","CMOS technology","Filtering","Circuits","Voltage","Electronic mail"
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
ISSN :
1545-827X
Print_ISBN :
978-1-4244-4413-7
Electronic_ISBN :
2377-0678
Type :
conf
DOI :
10.1109/SMICND.2009.5336694
Filename :
5336694
Link To Document :
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