Title :
CMOS RF active inductor with improved tuning capability
Author :
Cristian Andriesei;Liviu Goras;Farid Temcamani;Bruno Delacressoniere
Author_Institution :
?Gheorghe Asachi? Technical University, Ia?i, Romania
Abstract :
This paper presents an improved low power CMOS active inductor topology suitable for RF filtering. The circuit is derived from a previous designed transistor-only active inductor by adding a floating voltage source to one transistor gate fact that positively changes the overall dc biasing. If a current source with high output resistance is used for active inductor, this method can lead to lower interdependence between the self resonant frequency and quality factor. The simulations were carried out in 0.18 mum CMOS technology.
Keywords :
"Radio frequency","Active inductors","Resonant frequency","Active filters","Q factor","CMOS technology","Filtering","Circuits","Voltage","Electronic mail"
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Print_ISBN :
978-1-4244-4413-7
Electronic_ISBN :
2377-0678
DOI :
10.1109/SMICND.2009.5336694