DocumentCode :
3634006
Title :
Differential gain at 1.54 μm in Er-doped silicon nitride coupled to photonic crystal cavity
Author :
Maria Makarova;Yiyang Gong;Jelena Vu?kovi?;Sel?uk Yerci;Rui Li;Luca Dal Negro
Author_Institution :
Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
fYear :
2009
Firstpage :
220
Lastpage :
222
Abstract :
Light emission at 1.54 μm from Er-doped amorphous silicon nitride layer coupled to high quality factor photonic crystal resonators is studied. Resonances exhibit line-width narrowing with pump power, signifying differential gain in the material.
Keywords :
"Silicon","Photonic crystals","Temperature","Erbium","Q factor","Crystalline materials","Refractive index","Resonance","Optical materials","Cryogenics"
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2009. GFP ´09. 6th IEEE International Conference on
ISSN :
1949-2081
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-209X
Type :
conf
DOI :
10.1109/GROUP4.2009.5338386
Filename :
5338386
Link To Document :
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