Active transmission line on GaAs substrate

In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A³B⁵ semiconductors in external high-intensity electric field. The propagation properties of the fundamental mode are computed and the thermal analysis is performed. The problem of system stability is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime. This paper contributes to the current topic of active semiconductor waveguides and antennas which can be developed using presented concept.