Title :
Design considerations for integration of horizontal current bipolar transistor (HCBT) with 0.18 μm bulk CMOS technology
Author :
M. Koričić;T. Suligoj;H. Mochizuki;S. Morita;K. Shinomura;H. Imai
Author_Institution :
Department of Electronics, Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia
Abstract :
Horizontal Current Bipolar Transistor (HCBT) is the only bulk-silicon lateral bipolar transistor with state-of-the-art electrical performance published so far. Integration of the HCBT with a commercial 0.18 μm CMOS process has been demonstrated and yields a very low-cost BiCMOS technology platform suitable for wireless applications.
Keywords :
"CMOS technology","Bipolar transistors","CMOS process","Contacts","Silicon","Etching","Resists","Annealing","Protection","Electrons"
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS ´09. International
Print_ISBN :
978-1-4244-6030-4
DOI :
10.1109/ISDRS.2009.5378007
