Title :
Reliable procedure for electrical characterization of MOS-based devices
Author :
J. Dobeš;V. Paňko;L. Pospíšil
Author_Institution :
Czech Technical University in Prague, Department of Radio Engineering, Czech Republic
Abstract :
Contemporary BSIM- and EKV-type MOSFET models are very complicated. Therefore, their identification is a quite difficult task from both algorithmic and numeric points of view. In the paper, we outline several modifications of a classical procedure which enable reliable identifications of various types of these models.
Keywords :
MOSFET circuits
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS ´09. International
Print_ISBN :
978-1-4244-6030-4
DOI :
10.1109/ISDRS.2009.5378104
