• DocumentCode
    3634609
  • Title

    Electrical and optical characterisation of (λ∼9.4µm) GaAs-based quantum cascade lasers

  • Author

    Anna Szerling;Piotr Karbownik;Emilia Pruszy?ska-Karbownik;Kamil Kosiel;Maciej Bugajski;Shubhada Adhi;Tomasz Ochalski;Guillaume Huyet

  • Author_Institution
    Institute of Electron Technology, Al.Lotnik?w 32/46, 02-668 Warszawa, Poland
  • fYear
    2009
  • Firstpage
    71
  • Lastpage
    72
  • Abstract
    The basic device characterization of (λ-9.4 μm) GaAs-based quantum cascade lasers (QCLs) operating up to 260 K is reported. The laser design followed an "anticrossed-diagonal" scheme. The QCL structures were grown by MBE, with Riber Compact 21T reactor. The influence of injector doping on electrical and optical properties of the lasers has been clarified.
  • Keywords
    "Quantum cascade lasers","Doping","Gallium arsenide","Land surface temperature","Electrons","Gold","Quantum well lasers","Current-voltage characteristics","Testing","Surface emitting lasers"
  • Publisher
    ieee
  • Conference_Titel
    Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
  • Print_ISBN
    978-1-4244-3848-8
  • Type

    conf

  • DOI
    10.1109/TERAMIR.2009.5379622
  • Filename
    5379622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3634609