• DocumentCode
    3634610
  • Title

    Development of (λ∼9.4µm) GaAs-based quantum cascade lasers

  • Author

    Kamil Kosiel;Anna Szerling;Piotr Karbownik;Justyna Kubacka-Traczyk;Emilia Pruszyńska-Karbownik;Artur Trajnerowicz;Maciej Bugajski

  • Author_Institution
    Institute of Electron Technology, Al.Lotnikow 32/46, 02-668 Warszawa, Poland
  • fYear
    2009
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    The development of (λ˜9.4μm) GaAs-based quantum cascade lasers (QCLs) operating over 260 K is reported. The laser design followed an "anticrossed-diagonal" scheme of Page et al.. The QCL GaAs/Al0.45Ga0.55As heterostructures were grown by solid source (SS) MBE. The double trench lasers were fabricated using wet etching and Si3N4 for electrical insulation. Double plasmon confinement with Al-free waveguide has been used to minimize absorption losses. Optical and electrical properties of resulting devices are presented and discussed.
  • Keywords
    "Quantum cascade lasers","Optical waveguides","Optical design","Gallium arsenide","Solids","Waveguide lasers","Wet etching","Dielectrics and electrical insulation","Plasmons","Absorption"
  • Publisher
    ieee
  • Conference_Titel
    Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications, 2009. TERA-MIR 2009. International Workshop
  • Print_ISBN
    978-1-4244-3848-8
  • Type

    conf

  • DOI
    10.1109/TERAMIR.2009.5379636
  • Filename
    5379636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3634610