DocumentCode :
3634685
Title :
Temperature dependent photoluminescence process in ZnO thin films grown on quartz by sol-gel method
Author :
A. Zawadzka;P. Pl?ciennik;Z. Lukasiak;K. Bartkiewicz;A. Korcala
Author_Institution :
Institute of Physics, N. Copernicus University, Grudzi?dzka 5, PL 87-100 Toru?, Poland
fYear :
2009
Firstpage :
1
Lastpage :
3
Abstract :
The optical properties of ZnO thin films grown by sol-gel method on quartz wafers were studied using photoluminescence measurements for optical properties. The structural properties of the ZnO thin films were carried out using X-ray method. The effects of the thickness variation and annealing temperature on the crystallinity parameters were observed. A strong dependence of the films structure, the crystalline quality and the optical properties was also observed.
Keywords :
"Temperature dependence","Photoluminescence","Zinc oxide","Transistors","Optical films","Excitons","Annealing","Crystallization","Optical sensors","Temperature distribution"
Publisher :
ieee
Conference_Titel :
ICTON Mediterranean Winter Conference,2009. ICTON-MW 2009. 3rd
Print_ISBN :
978-1-4244-5745-8
Type :
conf
DOI :
10.1109/ICTONMW.2009.5385623
Filename :
5385623
Link To Document :
بازگشت