DocumentCode :
3634707
Title :
The nonlinear compact thermal model of power MOS transistors
Author :
Krzysztof Górecki;Janusz Zarębski
Author_Institution :
Department of Marine Electronics, Gdynia Maritime University, Poland
fYear :
2008
Firstpage :
196
Lastpage :
199
Abstract :
In the paper a new nonlinear compact thermal model of power MOS transistors based on the Cauer network is proposed. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the trench MOS transistor MTD20N06V at its various cooling conditions.
Keywords :
"MOSFETs","Thermal resistance","Semiconductor devices","Temperature dependence","Impedance","Cooling","Microscopy","Convolution","Microelectronics","Parameter estimation"
Publisher :
ieee
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
ISSN :
2159-1660
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
2159-1679
Type :
conf
DOI :
10.1109/ICM.2008.5393830
Filename :
5393830
Link To Document :
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