• DocumentCode
    3634853
  • Title

    On the ge-content dependent noise current in Si/SiGe MQW photodetector

  • Author

    Mukul K Das;N. R. Das

  • Author_Institution
    Dept. of Electronics & Instrumentation, ISM, Dhanbad, India
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In the present paper, noise analysis of a resonant-cavity-enhanced Si/SiGe/Si p-i-n multiple quantum well photodetector has been carried out considering the effects of material parameters of SiGe and carrier trapping at heterointerfaces. Effect of Ge-content and applied bias on the signal to noise ratio have been investigated using numerical simulation.
  • Keywords
    "Silicon germanium","Germanium silicon alloys","Quantum well devices","Photodetectors","Optical noise","Background noise","Signal to noise ratio","Noise generators","Signal generators","Acoustical engineering"
  • Publisher
    ieee
  • Conference_Titel
    Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on
  • Print_ISBN
    978-1-4244-5073-2
  • Type

    conf

  • Filename
    5407200
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3634853