Title :
A VLSI implementation of a 3Gb/s LVDS transceiver in CMOS technology
Author :
Radu Gabriel Bozomitu;Vlad Cehan;Constantin Barabaşa
Author_Institution :
Telecommunications Department, Faculty of Electronics, Telecommunications and Information Technology, "Gh. Asachi" Technical University, Carol I No.11 Av., 700506, Iasi, Romania
Abstract :
In this paper is presented the implementation of a transceiver for 3Gb/s operation, fully compatible with low-voltage differential signaling (LVDS) and Gen2i, Gen2m serial ATA standards. Due to the differential transmission technique and the low voltage swing, LVDS allows both high transmission speeds and low power consumption at the same time. The proposed transceiver is composed by a transmitter (TX) and a receiver (RX) circuits. The TX circuit provides a dc level independent over process, temperature, and supply voltage variations, by using a closed-loop control circuit and an internal voltage reference. The RX circuit is represented by a simple comparator based on the Schmitt trigger circuit. Both transmitter and receiver circuits show a dc current consumption of 20mA from 3.3V supply voltage. The simulations performed in a 0.18?m CMOS technology confirm the theoretical results.
Keywords :
"CMOS technology","Very large scale integration","Transceivers","Transmitters","Low voltage","Energy consumption","Temperature control","Voltage control","Trigger circuits","Circuit simulation"
Conference_Titel :
Design and Technology of Electronics Packages, (SIITME) 2009 15th International Symposium for
Print_ISBN :
978-1-4244-5132-6
DOI :
10.1109/SIITME.2009.5407400