Title :
Lifetime and performance of InGaAsP and InGaAs absorbers for low bandgap tandem solar cells
Author :
B.E. Sağol;N. Szabó;H. Döscher;U. Seidel;C. Höhn;K. Schwarzburg;T. Hannappel
Author_Institution :
Helmholtz-Zentrum Berlin fur Materialien und Energie, Glienicker Str. 100, 14109, Germany
fDate :
6/1/2009 12:00:00 AM
Abstract :
Time resolved photoluminescence (TRPL) measurements were used to evaluate the lifetimes of the low bandgap absorber materials InGaAsP (1.03 eV) and InGaAs (0.73 eV) embedded between InP barriers. A low bandgap tandem solar cell based on these absorber materials has been developed. The cell is designed to work below an InGaP / GaAs high bandgap tandem solar cell. Tandem solar cells grown with these absorber materials reached efficiencies above 10% (in-house) below a 4-?m-thick GaAs filter under 35 suns concentration.
Keywords :
"Indium gallium arsenide","Photonic band gap","Photovoltaic cells","Substrates","Conductivity","Epitaxial growth","Conductive films","Glass","X-ray scattering","Molecular beam epitaxial growth"
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Print_ISBN :
978-1-4244-2949-3
DOI :
10.1109/PVSC.2009.5411209
