Title :
64 to 86 GHz VCO utilizing push-push frequency doubling in a 80 GHz fT SiGe HBT technology
Author :
Gang Liu;A. Çagri Ulusoy;Andreas Trasser;Hermann Schumacher
Author_Institution :
Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein-Allee 45, 89081 Germany
Abstract :
In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 ?m SiGe HBT technology with fT/fmax of 80/90 GHz. The high frequency of operation is achieved by push-push frequency doubling. -4.5 dBm output at 87.1 GHz was reached by increasing the supply voltage. To the authors´ knowledge, a frequency generation IC operating so close to fmax with comparably wide tuning range and high output power has not yet been reported.
Keywords :
"Voltage-controlled oscillators","Frequency","Power generation","Tuning","Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Circuits","Varactors","Substrates"
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010 Topical Meeting on
Print_ISBN :
978-1-4244-5456-3
DOI :
10.1109/SMIC.2010.5422845