DocumentCode
3635054
Title
Scanning probe microscopy-based characterization of ZnO nanorods
Author
Christian Teichert; Yue Hou;Igor Beinik; Xinyi Chen;Y. F. Hsu;Aleksandra B. Djurišić;Wolfgang Anwand;Gerhard Brauer
Author_Institution
Institut fur Physik, Montanuniversitat Leoben, Austria
fYear
2010
Firstpage
438
Lastpage
439
Abstract
We apply scanning probe microscopy (SPM) to study the morphology and electrical properties of vertical zinc oxide nanorods grown by hydrothermal methods on silicon substrates. It is demonstrated that - against the intuition - SPM techniques can indeed be used to study such fragile high-aspect ratio semiconductor nanorods. Atomic-force microscopy (AFM) operating in tapping mode yields - via the analysis of the height histograms calculated from AFM images - easy access to the height fluctuations in the nanorod ensemble. High-resolution AFM images reveal the three-dimensional shape of the nanorods including transition facets between the (0001) top terrace and the {10-10} side facets. Further, we were able to acquire current-voltage curves of individual nanorods by conductive atomic force microscopy (CAFM) operating in contact mode.
Keywords
"Zinc oxide","Atomic force microscopy","Scanning probe microscopy","Morphology","Silicon","Substrates","Image analysis","Histograms","Fluctuations","Shape"
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
ISSN
2159-3523
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
2159-3531
Type
conf
DOI
10.1109/INEC.2010.5424502
Filename
5424502
Link To Document