• DocumentCode
    3635054
  • Title

    Scanning probe microscopy-based characterization of ZnO nanorods

  • Author

    Christian Teichert; Yue Hou;Igor Beinik; Xinyi Chen;Y. F. Hsu;Aleksandra B. Djurišić;Wolfgang Anwand;Gerhard Brauer

  • Author_Institution
    Institut fur Physik, Montanuniversitat Leoben, Austria
  • fYear
    2010
  • Firstpage
    438
  • Lastpage
    439
  • Abstract
    We apply scanning probe microscopy (SPM) to study the morphology and electrical properties of vertical zinc oxide nanorods grown by hydrothermal methods on silicon substrates. It is demonstrated that - against the intuition - SPM techniques can indeed be used to study such fragile high-aspect ratio semiconductor nanorods. Atomic-force microscopy (AFM) operating in tapping mode yields - via the analysis of the height histograms calculated from AFM images - easy access to the height fluctuations in the nanorod ensemble. High-resolution AFM images reveal the three-dimensional shape of the nanorods including transition facets between the (0001) top terrace and the {10-10} side facets. Further, we were able to acquire current-voltage curves of individual nanorods by conductive atomic force microscopy (CAFM) operating in contact mode.
  • Keywords
    "Zinc oxide","Atomic force microscopy","Scanning probe microscopy","Morphology","Silicon","Substrates","Image analysis","Histograms","Fluctuations","Shape"
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • ISSN
    2159-3523
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    2159-3531
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424502
  • Filename
    5424502