Analysis of Geometric Charge-Pumping Components in a Thin-Film SOI Device

A numerical analysis of the charge-pumping experiment in thin-film SOI pin-diodes is presented. The approach is based on the self-consistent two-dimensional numerical solution of the time-dependent semiconductor equations including the interface trap dynamic equations, which are solved for interface traps on the front and on the back interface of the SOI device. We can identify two distinct mechanisms of parasitic recombination on the back interface which show up for steep edges of the front gate pulse train. The influence of accumulation or inversion of the back interface on the appearance of these parasitic effects is analyzed numerically and comparisons of simulation results with measurement data are shown.