DocumentCode
3635144
Title
SAW transduction technique for GaAs microelectronics compatible acoustoelectronic devices
Author
R. Miskinis;P. Rutkowski
Author_Institution
Institute of Semiconductor Physics, A.Go?stauto 11, 2600 Vilnius, Lithuania
fYear
1993
Firstpage
663
Lastpage
666
Abstract
Performance of the surface acoustic wave (SAW) interdigital transducer (IDT) with doubled Al electrodes fabricated on GaAs wafers with submicrometre n-GaAs epitaxial layers has been investigated. Novel modes of linear as well as nonlinear operation of the transducer has been observed. The operation of electronic controllable SAW devices has been demonstrated which confirms possibility of creation of complex integrated circuits with acoustic and electron devices.
Keywords
"Surface acoustic waves","Gallium arsenide","Microelectronics","Surface acoustic wave devices","Acoustic transducers","Acoustic waves","Electrodes","Epitaxial layers","Acoustic devices","Electron devices"
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC ´93. 23rd European
Print_ISBN
2-86332-135-8
Type
conf
Filename
5435584
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