• DocumentCode
    3635147
  • Title

    Extrinsic GaAs:Mn Depectors for. 8 - 12 μm

  • Author

    V . Ryabokon;V. Bespalov;A. Emelyanov;N. Samsonov

  • Author_Institution
    Zelenograd Research Institute of Physical Problems.
  • fYear
    1993
  • Firstpage
    859
  • Lastpage
    859
  • Abstract
    Summary form only given. The present performance status of GaAs:Mn IR detectors for use In 8-12 μm windows of the atmosphere is summarized and discussed. Special property of these detectors is relatively high operational temperature 40-43 K. GaAs:Mn, as detector material, permits low cost fabrication of large reliable arrays (more than 100 elements in line) and afford convenient , efficient interface with electronic signal processors.
  • Keywords
    "Impurities","Sensor arrays","Conductivity","Temperature","Conducting materials","Signal processing","Infrared detectors","Costs","Fabrication","Materials reliability"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC ´93. 23rd European
  • Print_ISBN
    2-86332-135-8
  • Type

    conf

  • Filename
    5435623