Title :
Extrinsic GaAs:Mn Depectors for. 8 - 12 μm
Author :
V . Ryabokon;V. Bespalov;A. Emelyanov;N. Samsonov
Author_Institution :
Zelenograd Research Institute of Physical Problems.
Abstract :
Summary form only given. The present performance status of GaAs:Mn IR detectors for use In 8-12 μm windows of the atmosphere is summarized and discussed. Special property of these detectors is relatively high operational temperature 40-43 K. GaAs:Mn, as detector material, permits low cost fabrication of large reliable arrays (more than 100 elements in line) and afford convenient , efficient interface with electronic signal processors.
Keywords :
"Impurities","Sensor arrays","Conductivity","Temperature","Conducting materials","Signal processing","Infrared detectors","Costs","Fabrication","Materials reliability"
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC ´93. 23rd European
Print_ISBN :
2-86332-135-8
