Title :
Facet heating in high power GaAlAs/GaAs edge emitting laser diodes
Author :
U. Menzel;R. Puchert;A. Barwolff;A. Lau
Author_Institution :
Max - Born - Institut f?r Nichtlineare Optik und Kurzzeitspektroskopie, Rudower Chaussee 6, D-12489 Berlin, Germany
Abstract :
A self consistent model based on the simultaneous solution of the photon rate equations taking into account the diffusion equation for the carriers and the heat conduction equation is used to calculate facet temperatures in GaAlAs/GaAs QW-GRINSCH lasers. We investigated the influence of injection current and surface recombination velocity on the facet heating. The calculated axial carrier density, photon density and temperature distributions for different injection currents and facet reflectivities are discussed. The calculated facet temperatures are compared with temperatures determined by micro-Raman spectroscopy.
Keywords :
"Heating","Gallium arsenide","Diode lasers","Equations","Laser modes","Surface emitting lasers","Spontaneous emission","Charge carrier density","Temperature distribution","Reflectivity"
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC ´96. Proceedings of the 26th European
