Title :
Formation of Buried Layers by Laser Radiation
Author :
A. Medvid;J. Kaupuzs
Author_Institution :
Riga Technical University, Riga LV-1658, LATVIA, Laboratory of Semiconductor Physics
Abstract :
New conception and both experimental anid theoretical results regarding buried layers formation and control of their depth anid thickness are presented. Effect of the CO2 laser radiation on distribution and state of oxygen or nitrogen atoms, implanted in silicon wafer, is investigated experimentally. A model is proposed and equations are obtained descrbing the process of buried layer´s foruation from impurities, introduced inside the crystal, in presence of the temperature gradient. An interaction between impurities is taken into account.
Keywords :
"Laser theory","Impurities","Thickness control","Atom lasers","Laser modes","Nitrogen","Atomic beams","Atomic layer deposition","Atomic measurements","Silicon"
Conference_Titel :
Solid State Device Research Conference, 1995. ESSDERC ´95. Proceedings of the 25th European
