Title :
Characterization of Minority Carrier Concentration in the Base of npn SiGe HBT
Author :
S. Sokolic;S. Amon
Author_Institution :
Faculty of Electrical Engineering, University of Ljubljana, Tr?a?ka 25, 1000 Ljubljana, Slovenia
Abstract :
The effects influencing the minority carrier concentration in the base of npn SiGe HBT are studied. The physical phenomena which determine the apparent bandgap narrowing, and consequently the minority carrier concentration in the p-type SiGe base, have been identified. Based on comprehensive analysis of experimental data obtained from Si BJTs and SiGe HBTs, a consistent set of models determining the minority carrier concentration in p-type SiGe is proposedfor 77K?T?350K, NA?1020cm?3 and xGe?0.2.
Keywords :
"Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Semiconductor process modeling","Doping","Temperature dependence","Alloying","Photonic band gap","Data analysis","Electrons"
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC ´96. Proceedings of the 26th European
