• DocumentCode
    3635156
  • Title

    Characterization of Minority Carrier Concentration in the Base of npn SiGe HBT

  • Author

    S. Sokolic;S. Amon

  • Author_Institution
    Faculty of Electrical Engineering, University of Ljubljana, Tr?a?ka 25, 1000 Ljubljana, Slovenia
  • fYear
    1996
  • Firstpage
    657
  • Lastpage
    660
  • Abstract
    The effects influencing the minority carrier concentration in the base of npn SiGe HBT are studied. The physical phenomena which determine the apparent bandgap narrowing, and consequently the minority carrier concentration in the p-type SiGe base, have been identified. Based on comprehensive analysis of experimental data obtained from Si BJTs and SiGe HBTs, a consistent set of models determining the minority carrier concentration in p-type SiGe is proposedfor 77K?T?350K, NA?1020cm?3 and xGe?0.2.
  • Keywords
    "Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Semiconductor process modeling","Doping","Temperature dependence","Alloying","Photonic band gap","Data analysis","Electrons"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC ´96. Proceedings of the 26th European
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3635156