Title :
One junction approach to make deep submicron PMOSFETs for low power applications
Author :
S. Kubicek;S. Biesemans;K. De Meyer
Author_Institution :
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Abstract :
In this paper we report about theoretical and experimental investigation of the the possibility to fabricate deep submicron PMOS transistors for low power CMOS applications by using only one (HDD) junction without LDD or extensions as it is standardly done.
Keywords :
"MOSFETs","Doping profiles","Boron","Immune system","Hot carriers","Voltage","Hot carrier effects","Degradation","Boundary conditions","Region 3"
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC ´96. Proceedings of the 26th European
