Title :
Investigation of the Al-Ultrathin SiO2-Si System by Comparison of Theoretical and Experimental Current-Voltage Characteristics
Author :
Bogdan Majkusiak;Andrzej Jakubowski;Alfred Swit
Author_Institution :
Institute of Electron Technology, Technical University of Warsaw, Koszykowa 75, 00-662 Warsaw, Poland
Abstract :
Parameters of the Al-SiO2-Si(n) system with oxide thickness in the range from 2.5 nm to 4.5 nm are determined by fitting theoretical to expe-rimental current-voltage characteristics. The Si-SiO2 barrier height decreases while the electron effective mass in SiO2 and the oxide effective charge increase with decreasing the oxide thickness.
Keywords :
"Oxidation","Current-voltage characteristics","Electrons","Semiconductor diodes","Electrodes","MOSFETs","Lithography","Semiconductor device modeling","Dielectrics and electrical insulation","Effective mass"
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC ´87. 17th European
Print_ISBN :
0-444-70477-9
