Title :
Surface preparation for gallium nitride thick layers deposition by HVPE
Author :
Joanna Prażmowska;Adam Szyszka;Ryszard Korbutowicz;Regina Paszkiewicz;Jaroslav Kovač;Rudolf Srnanek;Marek Tłaczała
Author_Institution :
Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego Str. 11/17, 50-372, Poland
fDate :
6/1/2009 12:00:00 AM
Abstract :
Low-temperature gallium nitride buffer layers (LT-GaN) deposition preceded growth of high temperature gallium nitride (HT-GaN) thick layers. Buffers and thick layers were deposited on (0001) sapphire substrates by Hydride Vapor Phase Epitaxy (HVPE). Before nucleation layer deposition sapphire substrates were chemically and thermally treated in various ways. Substrate surface morphology was examined by Atomic Force Microscopy (AFM). Properties of GaN layers were investigated by AFM, Photoluminescence (PL), and micro-Raman measurements.
Keywords :
"III-V semiconductor materials","Gallium nitride","Substrates","Surface morphology","Atomic force microscopy","Buffer layers","Temperature","Epitaxial growth","Chemicals","Surface treatment"
Conference_Titel :
Students and Young Scientists Workshop "Photonics and Microsystems", 2009 International
Print_ISBN :
978-1-4244-4304-8
DOI :
10.1109/STYSW.2009.5470298
