Title :
Preparation technique of 6H-SiC(0001) wafers
Author :
Milosz Grodzicki;Radoslaw Wasielewski;Piotr Mazur;Antoni Ciszewski
Author_Institution :
Institute of Experimental Physics, University of Wroclaw, plac Maxa Borna 9, 50-204, Poland
Abstract :
We investigated 6H-SiC(0001) crystal Si face-oriented, prepared by ex situ hydrogen etching in a home made cold-wall tubular reactor. The atomic structure and topography were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Surface reconstructions were monitored by low energy electron diffraction (LEED). Chemical composition was determined using X-ray photoelectron spectroscopy under ultrahigh vacuum. Specific preparation conditions have been found for removing all scratches arising from the polishing process. We report the procedure how to achieve an atomically smooth, oxygen-free surface of SiC(0001).
Keywords :
"Atomic force microscopy","Surface reconstruction","Surface topography","Hydrogen","Etching","Inductors","Tunneling","Electrons","X-ray diffraction","Chemicals"
Conference_Titel :
Students and Young Scientists Workshop "Photonics and Microsystems", 2009 International
Print_ISBN :
978-1-4244-4304-8
DOI :
10.1109/STYSW.2009.5470309
