• DocumentCode
    3635979
  • Title

    Study of leakage mechanism and trap density in porous low-k materials

  • Author

    Gianni Giai Gischia;Kristof Croes;Guido Groeseneken;Zsolt T?kei;Valery Afanas´ev;Larry Zhao

  • Author_Institution
    IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
  • fYear
    2010
  • Firstpage
    549
  • Lastpage
    555
  • Abstract
    The field and temperature dependence of the leakage current of low-k material is studied by using planar capacitors. First it is shown that our planar capacitors are suitable test vehicles to analyze the intrinsic properties of low-k materials. Then an evaluation of the trap density of the investigated low-k material is performed. Eventually different models such as Poole-Frenkel emission, Schottky emission and trap-assisted Fowler-Nordheim tunneling are analyzed in a temperature range from 80 K to 473 K and in a field range from 4.2 MV/cm to 6.6 MV/cm. It is found that Poole-Frenkel emission and Schottky emission do not fit the experimental data, whereas trap-assisted Fowler-Nordheim tunneling exhibits an adequate match between the extracted parameters and the theoretical predictions.
  • Keywords
    "Dielectric materials","Capacitors","Leakage current","Voltage","Materials testing","Performance evaluation","Tunneling","Copper","Dielectric substrates","Temperature dependence"
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2010 IEEE International
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-5430-3
  • Electronic_ISBN
    1938-1891
  • Type

    conf

  • DOI
    10.1109/IRPS.2010.5488773
  • Filename
    5488773