Title :
Effects of constant voltage stress in Hf-doped Ta2O5 stacks
Author :
I. Manić;E. Atanassova;N. Stojadinović;D. Spassov
Author_Institution :
Faculty of Electronic Engineering, University of Nis, Aleksandra Medvedeva 14, 18000 Nis, Serbia
fDate :
5/1/2010 12:00:00 AM
Abstract :
Conduction mechanisms in Hf-doped Ta2O5 stacks (7; 10 nm) under the constant voltage stress (CVS) are probed by the SILC analysis. The low field conduction is ascribed to trap-assisted tunneling, and the Poole-Frenkel effect dominates at medium and high fields. Stress affects the pre-existing traps and their energy levels, but does not create additional traps. The thinner layers exhibit better temperature and electrical stability after CVS.
Keywords :
"Voltage","Stress","Leakage current","High K dielectric materials","Hafnium","High-K gate dielectrics","Dielectric constant","Optical films","Performance evaluation","Doping"
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490437
