Title :
Degradation of p-channel power VDMOSFETs under pulsed NBT stress
Author :
S. DjorićVeljković;D. Danković;A. Prijić;I. Manić;V. Davidović;S. Golubović;Z. Prijić;N. Stojadinović
Author_Institution :
Faculty of Civil Engineering and Architecture, University of Nis, Aleksandra Medvedeva 14, 18000 Nis, Serbia
fDate :
5/1/2010 12:00:00 AM
Abstract :
Results of pulsed NBT stress-induced threshold voltage instabilities in p-channel power VDMOSFETs are presented and compared with static NBTI results. Optimal frequency and duty cycle ranges for application of investigated devices are proposed as well.
Keywords :
"Degradation","Stress","Niobium compounds","Titanium compounds","MOSFETs","Pulse measurements","Threshold voltage","Frequency","Pulse amplifiers","Signal generators"
Conference_Titel :
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Print_ISBN :
978-1-4244-7200-0
DOI :
10.1109/MIEL.2010.5490448
