• DocumentCode
    3636060
  • Title

    Degradation of p-channel power VDMOSFETs under pulsed NBT stress

  • Author

    S. DjorićVeljković;D. Danković;A. Prijić;I. Manić;V. Davidović;S. Golubović;Z. Prijić;N. Stojadinović

  • Author_Institution
    Faculty of Civil Engineering and Architecture, University of Nis, Aleksandra Medvedeva 14, 18000 Nis, Serbia
  • fYear
    2010
  • fDate
    5/1/2010 12:00:00 AM
  • Firstpage
    443
  • Lastpage
    446
  • Abstract
    Results of pulsed NBT stress-induced threshold voltage instabilities in p-channel power VDMOSFETs are presented and compared with static NBTI results. Optimal frequency and duty cycle ranges for application of investigated devices are proposed as well.
  • Keywords
    "Degradation","Stress","Niobium compounds","Titanium compounds","MOSFETs","Pulse measurements","Threshold voltage","Frequency","Pulse amplifiers","Signal generators"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Proceedings (MIEL), 2010 27th International Conference on
  • Print_ISBN
    978-1-4244-7200-0
  • Type

    conf

  • DOI
    10.1109/MIEL.2010.5490448
  • Filename
    5490448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3636060