Investigation of dielectric — Semiconductor interface in MIS structures based on p-Hg0.8Cd0.2Te

In this paper we describes technological processes for the stabilization of interface between p-Hg_1-xCd_x and dielectric. Native oxide and native fluoride, as well as Al₂O₃ and SiO₂, have been applied as dielectrics. Influence of technological parameters used in dielectric layers production on interface charge densities was studied. Characterization of the produced structures has been carried out by analyzing their C/V diagrams. Based on the characterization results, the choice of the most suitable values of technological parameters for each dielectric has been made, thus enabling achievement of low values of the interface charges density. Produced tunnel MIS photo detectors show clearly exhibited dependence of Schottky barrier height on the metal used and specific detectivity as high as 5 × 10¹⁰ cm·Hz^1/2W^-1.