Title :
GaN-on-diamond field-effect transistors: from wafers to amplifier modules
Author :
D. I. Babić;Q. Diduck;P. Yenigalla;A. Schreiber;D. Francis;F. Faili;F. Ejeckam;J. G. Felbinger;L. F. Eastman
Author_Institution :
Group4 Labs, Inc., 13500 Stevenson Place, Suite 207, Fremont, CA 94539, USA
Abstract :
We describe the development and issues related to fabrication, die processing, and packaging GaN-on-diamond high-electron mobility transistors into X-band amplifier modules. We perform thermal resistance measurements on these amplifiers using liquid-crystal thermography and show that they agree with theory and previously published measurements on GaN-on-diamond devices.
Keywords :
"FETs","Gallium nitride","Thermal resistance","Radio frequency","Gallium arsenide","Silicon carbide","HEMTs","MODFETs","Power generation","Electronic packaging thermal management"
Conference_Titel :
MIPRO, 2010 Proceedings of the 33rd International Convention
Print_ISBN :
978-1-4244-7763-0
