Title :
Field Effect transistors for fast terahertz detection and imaging
Author :
W. Knap;S. Nadar;H. Videlier;S. Boubanga-Tombet;D. Coquillat;N. Dyakonova;F. Teppe;K. Karpierz;J. Łusakowski;M. Sakowicz;D. Seliuta;I. Kasalynas;G. Valušis;S. Monfray;T. Skotnicki
Author_Institution :
CNRS &
Abstract :
We present recent results on detection of terahertz radiation with nanometer size GaAs FETs and Si MOSFETs at room temperature. We demonstrate that the detection sensitivity and speed allows application of the transistors in terahertz imaging systems. At low temperatures the transistors can act as magnetic field tunable detectors.
Keywords :
"FETs","Optical imaging","Plasma temperature","Radiation detectors","Gallium arsenide","Plasma waves","Frequency","MOSFETs","Temperature sensors","Plasma properties"
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
Print_ISBN :
978-1-4244-5288-0
