Red light-emitting diode degradation and low-frequency noise characteristics

Comprehensive investigation of AIInGaP red light-emitting diodes (red LEDs) radiating at 625 nm characteristics and physical processes that take place in device structure during aging has been carried out. Analysis of noise characteristics (the emitting-light power and the LED voltage fluctuations and their cross-correlation factor) shows that investigated red LEDs degradation is caused by defects that lead to the non-radiating recombination increase in the active region or its interfaces. Our results have shown that noise characteristics are more sensitive to the formation of such defects in the red LED structure, and to its degradation.