Title :
Free Carrier Absorption investigations on ion irradiated fast recovery diodes
Author :
X. Perpiñà;X. Jordà;M. Vellvehi;J. Vobecký;J. Millón
Author_Institution :
Instituto de Microelectró
Abstract :
The combination of emitter control with local lifetime tailoring is experimentally analysed in fast recovery high-power diodes. For this purpose, the carrier lifetime and excess carrier concentration profiles are measured in both unirradiated and helium irradiated diodes. Employing the experimental lifetime profiles as input parameters, the SRH model parameters of device simulator are calibrated. Excellent agreement between the simulation and experimental results is obtained.
Keywords :
"Absorption","Semiconductor diodes","Anodes","Performance evaluation","Circuits","Current measurement","Insulated gate bipolar transistors","Charge carrier lifetime","Helium","Power engineering and energy"
Conference_Titel :
Power Semiconductor Devices & IC´s (ISPSD), 2010 22nd International Symposium on
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1946-0201
