Characterization of the organic field-effect transistor based on solution processed P3HT

The purpose of this paper is to present results of measurements taken on organic field effect transistors based on P3HT solution processed organic semiconductor. All discussed samples have been prepared both under ambient atmospheric conditions and in the dry nitrogen environment on rigid Si substrates covered with thermally grown SiO2 The electrical behaviour of OFETs has been subsequently examined under different test conditions. In particular, the overall device performance in normal room atmosphere as well as in the vacuum has been of special interest.