Title :
Nonlinear compact thermal model of SiC power semiconductor devices
Author :
Krzysztof Górecki;Janusz Zarębski;Damian Bisewski;Jacek Dąbrowski
Author_Institution :
Department of Marine Electronics, Gdynia Maritime University, Poland
Abstract :
The paper deals with the nonlinear compact thermal model of SiC power semiconductor devices based on the Cauer network. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the Schottky diode and MESFET transistor at their various cooling conditions.
Keywords :
"Integrated circuit modeling","Transistors","Temperature measurement","Thermal resistance","Transient analysis","Power measurement"
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2010 Proceedings of the 17th International Conference
Print_ISBN :
978-1-4244-7011-2
