Title :
Si-Ge surface-normal asymmetric Fabry-Perot quantum-confined stark effect electroabsorption modulator
Author :
Elizabeth H. Edwards;Ross M. Audet;Stephanie A. Claussen;Rebecca K. Schaevitz;Emel Taşyürek;Shen Ren;Yiwen Rong;Ted I. Kamins;James S. Harris;David A. B. Miller;Olufemi I. Dosunmu;M. Selim Ünlü
Author_Institution :
Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA
Abstract :
The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. Using an asymmetric Fabry-Perot design, we demonstrate the first surface-normal semiconductor modulator structure grown on silicon.
Keywords :
"Modulation","Silicon","Substrates","Mirrors","Absorption","Epitaxial growth","Reflectivity"
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2010 IEEE
Print_ISBN :
978-1-4244-3730-6
DOI :
10.1109/PHOSST.2010.5553689
