• DocumentCode
    3637424
  • Title

    Si-Ge surface-normal asymmetric Fabry-Perot quantum-confined stark effect electroabsorption modulator

  • Author

    Elizabeth H. Edwards;Ross M. Audet;Stephanie A. Claussen;Rebecca K. Schaevitz;Emel Taşyürek;Shen Ren;Yiwen Rong;Ted I. Kamins;James S. Harris;David A. B. Miller;Olufemi I. Dosunmu;M. Selim Ünlü

  • Author_Institution
    Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA
  • fYear
    2010
  • Firstpage
    211
  • Lastpage
    212
  • Abstract
    The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. Using an asymmetric Fabry-Perot design, we demonstrate the first surface-normal semiconductor modulator structure grown on silicon.
  • Keywords
    "Modulation","Silicon","Substrates","Mirrors","Absorption","Epitaxial growth","Reflectivity"
  • Publisher
    ieee
  • Conference_Titel
    Photonics Society Summer Topical Meeting Series, 2010 IEEE
  • Print_ISBN
    978-1-4244-3730-6
  • Type

    conf

  • DOI
    10.1109/PHOSST.2010.5553689
  • Filename
    5553689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3637424