DocumentCode :
3637425
Title :
Simple electroabsorption model for silicongermanium/germanium quantum well devices
Author :
Rebecca K. Schaevitz;Jonathan E. Roth;Elizabeth H. Edwards;Ross M. Audet;Stephanie A. Claussen;Emel Taşyürek;Shen Ren;Yiwen Rong;James S. Harris;David A. B. Miller
Author_Institution :
Edward L. Ginzton Laboratories, Stanford University, Stanford, CA
fYear :
2010
Firstpage :
219
Lastpage :
220
Abstract :
We present a simple model for the electroabsorption spectrum of germanium-based quantum wells, which can be used to optimize material design for modulators. The model gives very good agreement with our new experimental data.
Keywords :
"Absorption","Electric fields","Silicon germanium","Excitons","Modulation","Computational modeling"
Publisher :
ieee
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2010 IEEE
Print_ISBN :
978-1-4244-3730-6
Type :
conf
DOI :
10.1109/PHOSST.2010.5553693
Filename :
5553693
Link To Document :
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